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      SMD Schottky Barrier Rectifiers Reverse V oltage: 20 to 100 Volts Forward Current: 5.0 Amp RoHS Device Page 1 REV:A Features -Ideal for surface mount applications. -For use in low voltage, high frequency inventers . -Epitaxial construction. -Metal-semiconductor junction with guarding. -High current capability . -Low forward voltage drop. Mechanical data -Case: JEDEC DO-214AA, molded plastic. -T erminals: Solderable per MIL-STD-750, method 2026. -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams CDBB520-G Thru. CDBB5100-G Maximum Ratings and Electrical Characteristics Dimensions in inches and (millimeter) QW-BB036 CDBB 520-G 2 Notes: 1. Measured at 1. 0MHz an d applied re verse voltage of 4.0V DC . Comchip Technology CO., LTD. Max. repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. instantaneous forward voltage at 5.0A DC @T C=100°C Max. DC reverse current at TJ=25°C rated DC blocking voltage TJ=100°C Max. thermal resistance Max. operating junction temperature Storage temperature CDBB 540-G CDBB 560-G CDBB 580-G CDBB 5100-G Units Symbol Parameter VRRM VDC VRMS IFSM I(AV) VF IR RθJA RθJL TJ TSTG 20 20 14 40 40 28 60 60 42 175 5.0 0.70 0.5 20 50 10 -55 to +125 -55 to +150 80 80 56 100 100 70 V V V A A V mA °C/W °C °C 0.55 DO-214AA (SMB) 0.155(3.94) 0.130(3.30) 0.086(2.20) 0.077(1.95) 0.220(5.59) 0.205(5.21) 0.012(0.31) 0.006(0.15) 0.008(0.20) MAX. 0.060(1.52) 0.030(0.76) 0.096(2.44) 0.084(2.13) 0.180(4.57) 0.160(4.06) Max. average forward rectified current at TL=90°C Max. operating junction temperature CJ 300 PF CDBB 530-G CDBB 550-G 50 50 35 30 30 21 2. Thermal resistance jun ction to lead. |